Sökning: "Schottky barrier lowering"

Hittade 5 avhandlingar innehållade orden Schottky barrier lowering.

1. 1. Influence of Electron Charge States in Nanoelectronic Building Blocks

   Författare :Johan Piscator; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; silicon nanowire; conductance method; MOS; Schottky barrier lowering; CV; silicon on insulator SOI ; high-k; interface states; Schottky contacts; TSC.;

   Sammanfattning : The continued efforts to improve performance and decrease size of semiconductor logic devices are facing serious challenges. In order to further develop one of the most important nanoelectronic building blocks, the metal-oxide-semiconductor field-effect-transistor (MOSFET), several major problems have to be solved. LÄS MER

3. 2. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

4. 3. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

   Författare :Sang Kwon Lee; KTH; []
   Nyckelord :Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

   Sammanfattning : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. LÄS MER

5. 4. Silicon carbide field-effect devices studied as gas sensors for exhaust gas monitoring

   Författare :Peter Tobias; Ignaz Eisele; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; high temperature; gas sensors; field effect devices; MISdevices; Schottky diodes; experimental design; reaction kinetics; mass transport; car exhaust; multipoint injection; response times; cylinder specific; on-board diagnosis;

   Sammanfattning : Metal-insulator-silicon carbide (MIS) structures have been studied as gas sensors. We have investigated how the sensors detect gases, how fast they do that, and how they could be used for exhaust gas monitoring.We have prepared simple field-effect devices, MIS-capacitors and Schottky diodes, on silicon carbide with platinum gates. LÄS MER

7. 5. Numerical modelling of hot electron transport in Schottky-diodes and heterojunction structures

   Författare :Hans Hjelmgren; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; n-GaAs; ; energy balance equations; dc-properties;

   Sammanfattning : A one-dimensional drift-diffusion model, including energy balance equations, is used to model Schottky-diodes and heterojunction structures. The set of equations are solved simultaneously with a finite-difference iterative scheme. LÄS MER