Sökning: "Schottky contacts"

Visar resultat 1 - 5 av 23 avhandlingar innehållade orden Schottky contacts.

  1. 1. Schottky Contacs on Silicon Nanowires

    Författare :Johan Piscator; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Silicon On Insulator SOI ; Schottky contacts; Palladium silicide; Silicon nanowire;

    Sammanfattning : This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the end surfaces of silicon nanowires. It is shown, by measurements and analytical models, how the effective electron barrier is lowered by a positive charge introduced into an oxide embedding the wire. LÄS MER

  2. 2. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :Sang-Kwon Lee; KTH.; [2000]
    Nyckelord :silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

    Sammanfattning : .... LÄS MER

  3. 3. Influence of Electron Charge States in Nanoelectronic Building Blocks

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :Johan Piscator; [2009]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; silicon nanowire; conductance method; MOS; Schottky barrier lowering; CV; silicon on insulator SOI ; high-k; interface states; Schottky contacts; TSC.;

    Sammanfattning : The continued efforts to improve performance and decrease size of semiconductor logic devices are facing serious challenges. In order to further develop one of the most important nanoelectronic building blocks, the metal-oxide-semiconductor field-effect-transistor (MOSFET), several major problems have to be solved. LÄS MER

  4. 4. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :S. A. Perez-Garcia; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

    Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER

  5. 5. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Sang Kwon Lee; KTH.; [2002]
    Nyckelord :Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

    Sammanfattning : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. LÄS MER