Sökning: "SOI"

Visar resultat 36 - 40 av 76 avhandlingar innehållade ordet SOI.

  1. 36. Submillimeter-Wave Waveguide Frontends by Silicon-on-Insulator Micromachining

    Författare :Adrian Gomez-Torrent; Joachim Oberhammer; Umer Shah; Goutam Chattopadhyay; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; antenna; orthomode transducer; switch; waveguide; radiofrequency; beamforming network; submillimeter-wave; terahertz; silicon micromachining; deep reactive ion etching; silicon on insulator; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : This thesis presents novel radiofrequency (RF) frontend components in the submillimeter-wave (sub-mmW) range implemented by silicon micromachining, or deep reactive ion etching (DRIE). DRIE is rapidly becoming a driving technology for the fabrication of waveguide components and systems when approaching the terahertz (THz) frequency range. LÄS MER

  2. 37. Interaction of Ni with SiGe for electrical contacts in CMOS technology

    Författare :Johan Seger; Shi-Li Zhang; Christian Lavoie; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; MOSFET; NiSi; SiGe; phase formation; morphological stability; Fysik; Physics; Fysik;

    Sammanfattning : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. LÄS MER

  3. 38. Silicon Nanowire Based Sensors for Bacterial Tests

    Författare :Yingtao Yu; Zhen Zhang; Mihai Adrian Ionescu; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nanowire; field-effect transistor; antibiotic susceptibility test; bacterial metabolism; nanoelectromechanical sensor; multiplexed detection;

    Sammanfattning : Rapid and reliable antibiotic susceptibility testing (AST) is urgently required to diagnose bacterial infectious diseases and avoid antibiotic misuse, providing valuable information on the efficacy of antibiotic agents and their dosages for treatment. However, the currently employed phenotypic ASTs normally demand the growth of bacteria into colonies, which usually takes more than two days. LÄS MER

  4. 39. Silicon Nanowire Based Electronic Devices for Sensing Applications

    Författare :Qitao Hu; Zhen Zhang; Shi-Li Zhang; Si Chen; Jeehwan Kim; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nanowire; field-effect transistor; nanoelectromechanical resonator; CMOS-compatible; multiplexed detection; single charge detection; quantum sensing; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : Silicon nanowire (SiNW) based electronic devices fabricated with a complementary metal-oxide-semiconductor (CMOS) compatible process have wide-range and promising applications in sensing area. These SiNW sensors own high sensitivity, low-cost mass production possibility, and high integration density. LÄS MER

  5. 40. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    Författare :Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. LÄS MER