Sökning: "Power semiconductor devices"

Visar resultat 41 - 45 av 171 avhandlingar innehållade orden Power semiconductor devices.

  1. 41. High Frequency (MHz) Planar Transformers for Next Generation Switch Mode Power Supplies

    Författare :Radhika Ambatipudi; Kent Bertilsson; Bengt Oelmann; Jesus Doval Gandoy; Hans-Peter Nee; Torbjörn Thiringer; Göran Thungström; Mittuniversitetet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Planar Magnetics; DC-DC Converters; Switch Mode Power Supplies; MHz Frequency Region;

    Sammanfattning : Increasing the power density of power electronic converters while reducing or maintaining the same cost, offers a higher potential to meet the current trend inrelation to various power electronic applications. High power density converters can be achieved by increasing the switching frequency, due to which the bulkiest parts, such as transformer, inductors and the capacitor's size in the convertercircuit can be drastically reduced. LÄS MER

  3. 42. On the design of hybrid DC-breakers consisting of a mechanical switch and semiconductor devices

    Författare :Jesper Magnusson; Göran Engdahl; Staffan Norrga; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DC; circuit breaker; hybrid breaker; DC systems; DC; brytare; hybridbrytare; likström;

    Sammanfattning : The interest of using direct current in networks for both transmission and distribution of power is increasing due to the higher efficiency compared to the alternating current used today. As no natural zero crossings exist in direct current, the interruption of fault currents becomes a challenge. LÄS MER

  4. 43. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective

    Författare :Gautham Rangasamy; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-Power Electronics; Self-Heating; Steep Slope Devices; Tunnel Field-Effect Transistors; Vertical Nanowire; III-V Semiconductors;

    Sammanfattning : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. LÄS MER

  5. 44. Dynamic Characterization of Semiconductor Lasers and Intensity Modulators

    Författare :Marek Chacinski; Urban Westergren; Krassimir Panajotov; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Optical physics; Optisk fysik;

    Sammanfattning : The research work presented in this thesis deals with characterization ofdynamics of active photonic devices that are based on semiconductormaterials. The thesis contains an introduction and a collection of publishedarticles in peer reviewed international journals and conferences. LÄS MER

  7. 45. Radiation Hardness of 4H-SiC Devices and Circuits

    Författare :Sethu Saveda Suvanam; Anders Hallén; Carl-Mikael Zetterling; Ulrike Grossner; KTH; []
    Nyckelord :Silicon carbide; radiation hardness; protons; gamma radiation; bipolar junction transistors; aluminium oxide; surface recombination.; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. LÄS MER