Sökning: "Power semiconductor devices"
Visar resultat 31 - 35 av 171 avhandlingar innehållade orden Power semiconductor devices.
31. Quantum Transport in Heterostructure Nanowire Devices
Sammanfattning : This thesis investigates electronic transport in several types of novel heterostructure nanowires. The first part of the thesis focuses on band-to-band mechanisms in heterostructure nanowires for low-power electronics. First, tunnel field-effect transistors (TFETs) based on InP/GaAs heterostructure nanowires with n-i-p doping profile are explored. LÄS MER
32. Physical modeling of on-state losses in bipolar Si and SiC power devices
Sammanfattning : Power losses affect both the installation- and long-term cost of power electronic systems. The installation cost is related to the fatt that power losses in silicon power devices generate heat and make installation of heat sinks and water cooling necessary. If self-heating effects are strong, lotal overheating can eventually lead to device failure. LÄS MER
33. Compound semiconductor materials and processing technologies for photonic devices and photonics integration
Sammanfattning : The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e. LÄS MER
34. Semiconductor Nanowires: Characterization and surface modification
Sammanfattning : The topic of III-V nanowires is still, after more than two decades, a growing and lively research area. The areas of application are wide and contain such important topics as energy harvesting, cheap and efficient lighting, high efficiency detectors and new types of electronics. III-V materials offer properties superior to the widely used Si. LÄS MER
35. High Temperature Bipolar SiC Power Integrated Circuits
Sammanfattning : In the recent decade, integrated electronics in wide bandgap semiconductor technologies such as Gallium Nitride (GaN) and Silicon Carbide (SiC) have been shown to be viable candidates in extreme environments (e.g high-temperature and high radiation). Such electronics have applications in down-hole drilling, automobile-, air- and space- industries. LÄS MER
