Sökning: "Power semiconductor devices"

Visar resultat 36 - 40 av 171 avhandlingar innehållade orden Power semiconductor devices.

  1. 36. Millimeter-Wave Radar for Low-Power Applications

    Författare :Sebastian Heunisch; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Gesture Recognition; Material Characterization; Radar; Reflectrometry; Resonant-Tunnelling Diode; Wavelet Generator; Wideband Millimeter-Wave Circuits;

    Sammanfattning : Radar technology has developed rapidly during the last century. Besides its initial use for military, it is nowadays also applied for many civil applications. Improvements in circuit technology make integrated radar sensors possible, allowing a significant reduction of the production cost. LÄS MER

  3. 37. Wireless High-Temperature Monitoring of Power Semiconductors : A Single-Chip Approach

    Författare :Joakim Nilsson; Jonny Johansson; Johan Borg; Johan Sidén; Luleå tekniska universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Industrial Electronics; Industriell elektronik;

    Sammanfattning : Because failures in power electronic equipment can cause production stops and unnecessary damage to interconnected equipment, monitoring schemes that are able to predict such failures provide various economic and safety benefits. The primary motivation for this thesis is that such monitoring schemes can increase the reliability of energy production plants. LÄS MER

  4. 38. III-V Devices for Emerging Electronic Applications

    Författare :Patrik Olausson; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

    Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER

  5. 39. Nanowire Transistors and RF Circuits for Low-Power Applications

    Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
    Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

    Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER

  7. 40. Design and Fabrication of III-V Semiconductor Devices for Millimetre- and Submillimetre Wave Applications

    Författare :Svein M. Nilsen; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Devices (various types of diodes) have been fabricated in several different III-V semiconductors (AlxGa1-xAs, In1-xGaxAs, and InAs). The III- V compound semiconductors lend themselves well to high frequency applications due to the high electron mobility that can be obtained. LÄS MER