Sökning: "Gautham Rangasamy"

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  1. 1. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective

    Författare :Gautham Rangasamy; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-Power Electronics; Self-Heating; Steep Slope Devices; Tunnel Field-Effect Transistors; Vertical Nanowire; III-V Semiconductors;

    Sammanfattning : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. LÄS MER