Sökning: "Power semiconductor devices"

Visar resultat 11 - 15 av 171 avhandlingar innehållade orden Power semiconductor devices.

  1. 11. InAs Nanowire Devices and Circuits

    Författare :Kristofer Jansson; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Sammanfattning : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. LÄS MER

  2. 12. High Power, Long Wavelength Semiconductor Disk Lasers for Continuous and Mode-Locked Operation

    Författare :Hans Lindberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; mode-locking; thermal management; spectral properties; optically pumped; single frequency; beam quality; vertical-external-cavity surface-emitting laser; disk laser; Semiconductor laser;

    Sammanfattning : The semiconductor disk laser has recentlyemerged as an attractive alternative to bulky and power consuming gas and solid state lasers. It offers compact, powerful and efficient devices with W level output power and beam properties earlier not achieved with semiconductor lasers. LÄS MER

  3. 13. Microwave power device characterization

    Författare :Kristoffer Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

    Sammanfattning : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. LÄS MER

  4. 14. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

    Författare :Mattias Thorsell; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; noise modelling; nonlinear measurement; active load-pull; noise measurement; thermal characterisation; AlGaN GaN HEMT; nonlinear modelling;

    Sammanfattning : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. LÄS MER

  5. 15. Electro-thermal simulations and measurements of silicon carbide power transistors

    Författare :Wei Liu; Carl-Mikael Zetterling; Nicholas G. Wright; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; silicon carbide; power device; metal semiconductor field-effect transistor; bipolar junction transistor; electro-thermal simulation; Elektronik; Electronics; Elektronik;

    Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER