Avancerad sökning

Hittade 5 avhandlingar som matchar ovanstående sökkriterier.

  1. 1. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires

    Författare :David Göransson; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; InAsP-InP core-shell nanowire; InP-InAs core-shell nanowire; strain; XRD; charge transport; Coulomb blockade; Josephson junction; Fysicumarkivet A:2019:Göransson;

    Sammanfattning : The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding wire shaped crystals(nanowires) having a length of ~ 1 μm and diameter of ~ 100 nm. LÄS MER

  3. 2. Charge transport in III-V narrow bandgap semiconductor nanowires

    Författare :Bekmurat Dalelkhan; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InSb; InP-InAs; narrow bandgap; spin-orbit interaction; quantum dots; Nanowires; Fysicumarkivet A:2019:Dalelkhan;

    Sammanfattning : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. LÄS MER

  4. 3. Influence of Seed Particle Material, Preparation, and Dynamics on Nanowire Growth

    Författare :Karla Hillerich; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapor phase epitaxy; III-V seminconductor materials; nanowires; Fysicumarkivet A:2013:Hillerich; in situ TEM;

    Sammanfattning : Semiconducting nanowires have attracted scientific attention for more than 20 years due to their potential applications in electronic devices, as sensors, and in solid state lighting. These applications require high quality nanowires to begin with. LÄS MER

  5. 4. Electronic Structure Calculations of Point Defects in Semiconductors

    Författare :Andreas Höglund; Susanne Mirbt; Alison Mainwood; Uppsala universitet; []
    Nyckelord :Physics; electronic structure calculations; point defects; semiconductor; formation energy; equilibrium solubility limit; thermodynamic equilibrium concentration; transfer levels; negative-U; 110 surface; diffusion; activation energy; solar cells; Fysik;

    Sammanfattning : In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. LÄS MER

  7. 5. Advanced patterning and processing for III-V nanowire device fabrication

    Författare :Reza Jafari Jam; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowires NWs ; Electrodeposition; Template-assisted growth; Substrate re-use; Sacrificial layer; Fysicumarkivet A:2020:Jafari Jam;

    Sammanfattning : Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. LÄS MER