Sökning: "GaN-HEMT"

Visar resultat 6 - 10 av 28 avhandlingar innehållade ordet GaN-HEMT.

  1. 6. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

    Författare :Martin Fagerlind; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface states; surface passivation; annealing; processing; AlGaN GaN HEMT; MIS-capacitor;

    Sammanfattning : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. LÄS MER

  3. 7. High Efficiency Microwave Power Amplifiers in GaN-HEMT Technology

    Författare :Paul Saad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : .... LÄS MER

  4. 8. MMIC-based Low Phase Noise Millimetre-wave Signal Source Design

    Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; millimetre-wave; MMIC; low frequency noise; phase noise; GaN HEMT; signal source; D-band; InP DHBT; deposition method.; SiGe BiCMOS; frequency multiplier; VCO; passivation;

    Sammanfattning : Wireless technology for future communication systems has been continuously evolving to meet society’s increasing demand on network capacity. The millimetre-wave frequency band has a large amount of bandwidth available, which is a key factor in enabling the capability of carrying higher data rates. LÄS MER

  5. 9. Oscillator design in III-V technologies

    Författare :Szhau Lai; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; InGaP HBT; device model; mixer; Darlington pair; GaN HEMT; simulation; varactor; phase noise; CAD; switch mode.; VCO; Colpitts oscillator; low frequency noise;

    Sammanfattning : The thesis treats the design of low phase noise oscillators/VCOs in GaAs/InGaP HBT and GaN HEMT technologies. The covered topics are: active device modeling, noise characterization, passive structures, phase noise models, simulation/measurement tools, circuit topologies, and design techniques. LÄS MER

  7. 10. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Författare :Johan Bergsten; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER