Sökning: "GaN-HEMT"
Visar resultat 16 - 20 av 28 avhandlingar innehållade ordet GaN-HEMT.
16. Efficient and Wideband Power Amplifiers for Wireless Communications
Sammanfattning : The rapid evolution of wireless communication systems and the developmentof new standards require that wireless transmitters process several types ofstandards across multiple bands. Power amplifiers (PAs) are key componentsin wireless transmitters because they have a big impact on the overall systemperformance in terms of their bandwidth, efficiency, and linearity. LÄS MER
17. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping
Sammanfattning : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. LÄS MER
18. Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters
Sammanfattning : The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and high power amplifiers on a single-chip. The AluminiumGallium Nitride / Gallium Nitride (AlGaN/GaN) High Electron MobilityTransistors (HEMT) is a suitable semiconductor technology for this purposedue to its high breakdown voltage and high electron mobility. LÄS MER
19. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices
Sammanfattning : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. LÄS MER
20. Microwave Power Devices and Amplifiers for Radars and Communication Systems
Sammanfattning : SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER