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Visar resultat 1 - 5 av 9 avhandlingar som matchar ovanstående sökkriterier.

1. 1. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

   Författare :Bernhard Kowalski; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

   Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER

3. 2. Quantum and Ballistic Nanodevices

   Författare :Ivan Shorubalko; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; low-dimensional structures; nanostructures; ballistic rectifiers; three-terminal ballistic junctions; quantum wires; planar quantum dots; logic gates; harmonic generation; InP; GaInAs; nanoelectronics; Fysik; Physics; nonlinear transport; electron transport; quantum nanodevices; ballistic nanodevices; Fysicumarkivet A:2003:Shorubalko;

   Sammanfattning : In this thesis, electron transport in quantum and ballistic devices was studied. The devices studied here were quantum wires, planar quantum dots, ballistic rectifiers, artificial functional materials, and three-terminal ballistic junctions. The possible application of such devices in the future nanoelectronics was also investigated. LÄS MER

4. 3. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

   Författare :Dan Hessman; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

   Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

5. 4. Electron Transport in Low Dimensional Systems

   Författare :Peter Ramvall; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; high mobility; low-dimensional structures; III-V semiconductors; quantum wells; heterojunctions; quantum Hall effect; edge channels; Shubnikov-de Haas effect; alloy-disorder scattering; Y-branch switch; two dimensional electron gas; Fysik; Fysicumarkivet A:1996:Ramvall; Physics; spin splitting; mag;

   Sammanfattning : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. LÄS MER

7. 5. Fabrication of Low-Dimensional Structures in III-V Semiconductors

   Författare :Ivan Maximov; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; plasma; etching; aerosol; lithography; quantum dots; quantum well wires; quantum point contact; damage; luminescence; Fysicumarkivet A:1997:Maximov; Halvledarfysik; Semiconductory physics;

   Sammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER