Visar resultat 1 - 5 av 9 avhandlingar innehållade ordet GaInAs.
Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER
Sammanfattning : In this thesis, electron transport in quantum and ballistic devices was studied. The devices studied here were quantum wires, planar quantum dots, ballistic rectifiers, artificial functional materials, and three-terminal ballistic junctions. The possible application of such devices in the future nanoelectronics was also investigated. LÄS MER
Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER
Sammanfattning : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. LÄS MER
Sammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER