Sökning: "Stranski-Krastanow"

Visar resultat 1 - 5 av 9 avhandlingar innehållade ordet Stranski-Krastanow.

  1. 1. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    Författare :Dan Hessman; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

  2. 2. Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

    Författare :Jonas Johansson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Self-assembled quantum dots; Metal organic vapour phase epitaxy; Physics; Stranski-Krastanow; Fysicumarkivet 2000:Johansson; Halvledarfysik; Semiconductory physics; Fysik;

    Sammanfattning : This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. LÄS MER

  3. 3. Cathodoluminescence Studies of Quantum Structures and III-V nitrides

    Författare :Anders Petersson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; AlGaN; Fysik; Physics; GaN-AlGaN; single dot spectroscopy; InP-GaInP; Stranski Krastanow; quantum dots; quantum wires; low-dimensional structures; InAs-GaAs; III-V nitride; Cathodoluminescence; III-V semiconductors; Fysicumarkivet A:1999:Petersson;

    Sammanfattning : Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is based on experiments, using cathodoluminescence (CL) as a tool for characterization. The high spatial resolution and the possibility of spectroscopy of small structures make CL one of the most powerful techniques for these types of investigations. LÄS MER

  4. 4. Optical Studies of Single Quantum Dots

    Författare :Jonas Persson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; nano-optics; quantum optics; photoluminescence; micro-photoluminescence; single photon generation; Semiconductory physics; Halvledarfysik; low-dimensional structures; quantum dots; Stranski-Krastanow; Fysicumarkivet A:2004:Persson;

    Sammanfattning : This thesis presents spectroscopic studies of single self-assembled InP quantum dots (QDs). The electronic properties of these QDs have been studied by photoluminescence (PL) and scanning tunnelling luminescence (STL). The QDs were grown in the Stranski-Krastanow mode and were embedded in GaInP. LÄS MER

  5. 5. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

    Författare :Bernhard Kowalski; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

    Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER