Sökning: "InAs-InP"

Visar resultat 1 - 5 av 21 avhandlingar innehållade ordet InAs-InP.

  1. 1. Optical Studies of InAs Quantum Dots in III-V Semiconductors

    Författare :Lars Landin; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum dots; III-V semiconductors; k.p calculations; photoluminescence; deep-level transient spectroscopy; photoconductivity; few particle effect; single dot spectroscopy; InAs InP; Semiconductory physics; Halvledarfysik; Fysicumarkivet A:2000:Landin; InAs GaAs;

    Sammanfattning : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. LÄS MER

  3. 2. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    Författare :Dan Hessman; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

  4. 3. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires

    Författare :David Göransson; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; InAsP-InP core-shell nanowire; InP-InAs core-shell nanowire; strain; XRD; charge transport; Coulomb blockade; Josephson junction; Fysicumarkivet A:2019:Göransson;

    Sammanfattning : The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding wire shaped crystals(nanowires) having a length of ~ 1 μm and diameter of ~ 100 nm. LÄS MER

  5. 4. Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures

    Författare :Magnus Borgström; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum transport; resonant tunneling diodes; relativity; quantum mechanics; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; gravitation; statistisk fysik; termodynamik; classical mechanics; Mathematical and general theoretical physics; whiskers; ultra high vacuum chemical vapor deposition; RTD; self assembled quantum dots; semiconducting III-V materials; nanowires; metalorganic vapor phase epitaxy; MOVPE; nanostructures; AFM; Atomic force microscopy; InAs; Fysicumarkivet A:2003:Borgström;

    Sammanfattning : This thesis deals with the growth, processing and characterization of nano-sized structures, eg., self-assembled quantum dots and nano-wires. LÄS MER

  7. 5. Studies of Novel Nanostructures by Cross- sectional Scanning Tunneling Microscopy

    Författare :Lassana Ouattara; Synkrotronljusfysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Dilute ferromagnetic semiconductors Superlattices; Cross-sectional scanning tunneling microscopy; Semiconductor nanostructures; Fysik; Physics; Epitaxy; Quantum dots; Nanowires;

    Sammanfattning : This thesis presents structural and morphological studies of semiconductor nanostructures, namely quantum dots, nanowires and a dilute ferromagnetic semiconductor. These nanostructures are investigated on the atomic scale using cross-sectional scanning tunneling microscopy (XSTM). LÄS MER