Sökning: "GaInAs-InP"

Hittade 5 avhandlingar innehållade ordet GaInAs-InP.

1. 1. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

   Författare :Dan Hessman; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

   Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

3. 2. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

   Författare :Bernhard Kowalski; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

   Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER

4. 3. Electron Transport in Low Dimensional Systems

   Författare :Peter Ramvall; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; high mobility; low-dimensional structures; III-V semiconductors; quantum wells; heterojunctions; quantum Hall effect; edge channels; Shubnikov-de Haas effect; alloy-disorder scattering; Y-branch switch; two dimensional electron gas; Fysik; Fysicumarkivet A:1996:Ramvall; Physics; spin splitting; mag;

   Sammanfattning : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. LÄS MER

5. 4. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures

   Författare :Niclas Carlsson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; low-dimensional structures; metalorganic vapour phase epitaxy; quantum wells; self-assembled dots; quantum dots; Fysicumarkivet A:1998:Carlsson; Halvledarfysik;

   Sammanfattning : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. LÄS MER

7. 5. Low and High Energy Ion Beams in Nanotechnology

   Författare :Thomas Winzell; Kärnfysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; ion implantation; magnetic materials; ERDA; nanometer structures; Nuclear physics; MeV Ions; lithography; Kärnfysik; Fysicumarkivet A:2000:Winzell;

   Sammanfattning : In this thesis, two ways of fabrication of nanometer-sized semiconductor features are presented. Low Energy Ion Implantation (LEII) has been used to create shallow (sub-50 nm) and laterally small (5 m m – 200 nm) features by 10 keV As+ doping of B background doped Si. LÄS MER