Sökning: "Shubnikov-de Haas effect"

Hittade 5 avhandlingar innehållade orden Shubnikov-de Haas effect.

1. 1. Electron Transport in Low Dimensional Systems

   Författare :Peter Ramvall; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; high mobility; low-dimensional structures; III-V semiconductors; quantum wells; heterojunctions; quantum Hall effect; edge channels; Shubnikov-de Haas effect; alloy-disorder scattering; Y-branch switch; two dimensional electron gas; Fysik; Fysicumarkivet A:1996:Ramvall; Physics; spin splitting; mag;

   Sammanfattning : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. LÄS MER

3. 2. Study of novel electronic materials by mid-infrared and terahertz optical Hall effect

   Författare :Nerijus Armakavicius; Vanya Darakchieva; Philipp Kühne; Mircea Modreanu; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. LÄS MER

4. 3. Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect

   Författare :Nerijus Armakavicius; Vanya Darakchieva; Philipp Kühne; Stefan Zollner; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Development of silicon based electronics have revolutionized our every day life during the last five decades. Nowadays silicon based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. LÄS MER

5. 4. Quantum electronic transport in low-dimensional semiconductors

   Författare :Heiner Linke; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum transport; two-dimensional electron gas; contact-free characterisation; ballistic transport; mesoscopic; electron billiard; quantum dot; electron-electron interaction; non-linear; phase breaking; Halvledarfysik; Fysicumarkivet A:1997:Linke; non-symmetric conductio; Semiconductory physics; low-dimensional structures;

   Sammanfattning : Electronic transport is studied at low temperatures in two-dimensional electron gases (2DEGs) and in mesoscopic semiconductor microstructures. The method of microwave-detection of the Shubnikov-de Haas effect for the contact-free characterisation of transport properties of 2DEGs is explored using both magnetic-field modulation and light-induced carrier modulation. LÄS MER

7. 5. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

   Författare :Bernhard Kowalski; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

   Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER