Sökning: "Deep level transient spectroscopy"

Visar resultat 11 - 15 av 19 avhandlingar innehållade orden Deep level transient spectroscopy.

  1. 11. Electrical Properties of Gold-related Defect Complexes in Silicon

    Författare :Einar Sveinbjörnsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DLTS; gettering; Au in Si; lithium diffusion; Au-H complexes; Au-Li complexes; deep levels; phosphorus diffusion; hydrogen in silicon;

    Sammanfattning : This thesis describes three extensive experiments concerning the properties of gold as an impurity atom in crystalline silicon. The first study is an investigation of the effect of phosphorus diffusion on the distribution of gold atoms within a silicon crystal. LÄS MER

  3. 12. Capacitance transient measurements on point defects in silicon and silicol carbide

    Författare :Hanne Kortegaard Nielsen; Anders Hallén; F. Damie Auret; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; Elektronik; Electronics; Elektronik;

    Sammanfattning : Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. LÄS MER

  4. 13. Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications

    Författare :Lars-Erik Wernersson; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Schottky contacts; space-charge spectroscopy; ballistic transport; Coulomb repulsion; electron interference; resonant tunnelling; lateral confinement; heterojunction permeable base transistor; resonant tunnelling diodes; Fysicumarkivet A:1998:Wernersson; Fysik; Physics; resonant tun; epitaxial overgrowth;

    Sammanfattning : Fabrication and characterisation of buried metal contacts in compound semiconductors are demonstrated. The contacts have been investigated due to their usage both as gates in transistors and as active or passive elements in novel devices. LÄS MER

  5. 14. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers

    Författare :James P. Doyle; KTH; []
    Nyckelord :;

    Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER

  7. 15. Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC

    Författare :Xuan Thang Trinh; Nguyen Tien Son; Erik Janzén; Jan Stehr; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon (Si) is the most commonly used n-type dopant in AlGaN, but the conductivity of Si-doped AlxGa1-xN was often reported to drop abruptly at high Al content (x>0.7) and the reason was often speculated to be due to either compensation by deep levels or self-compensation of the so-called DX (or negative-U) center. LÄS MER