Sökning: "James P. Doyle"

Hittade 1 avhandling innehållade orden James P. Doyle.

1. 1. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers

   Författare :James P. Doyle; KTH; []
   Nyckelord :;

   Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER