Sökning: "hydrogen in silicon"

Visar resultat 1 - 5 av 57 avhandlingar innehållade orden hydrogen in silicon.

  1. 1. Electrical Properties of Gold-related Defect Complexes in Silicon

    Författare :Einar Sveinbjörnsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DLTS; gettering; Au in Si; lithium diffusion; Au-H complexes; Au-Li complexes; deep levels; phosphorus diffusion; hydrogen in silicon;

    Sammanfattning : This thesis describes three extensive experiments concerning the properties of gold as an impurity atom in crystalline silicon. The first study is an investigation of the effect of phosphorus diffusion on the distribution of gold atoms within a silicon crystal. LÄS MER

  3. 2. Bound excitons in silicon carbide

    Författare :Tryggvi Egilsson; Gordon Davies; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The investigation of silicon carbide (SiC) is strongly motivated by the potential of this material for various demanding electronic applications. The main virtue of SiC is its toughness compared to other more common semiconductors. LÄS MER

  4. 3. Hydrogen diffusion and ion implantation in silicon carbide

    Författare :Martin Janson; KTH; []
    Nyckelord :heat abd tgernidtbanucs; electronics and electrical; materials science;

    Sammanfattning : Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. LÄS MER

  5. 4. Electrically active defects in 4H silicon carbide

    Författare :Liutauras Storasta; Tsunenobu Kimoto; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Development of future technology needs to widen the application areas of semiconductor devices. The increased requirements are beyond the limits of the most common semiconductors today like silicon or gallium arsenide. Use of new materials could resolve many performance issues and also offer increased reliability and reduced cost of the devices. LÄS MER

  7. 5. Optical properties of some complex defects in silicon

    Författare :Johan Svensson; G. D Watkins; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : lnfrared absorption spectroscopy has been used study transitions between electronic states related to some complex defects in silicon. Three different defects have been studied: a complex defect involving carbon as one of its constituents, a divacancy, and a defect found in silicon containing tin. LÄS MER