Sökning: "hydrogen in silicon"

Visar resultat 1 - 5 av 42 avhandlingar innehållade orden hydrogen in silicon.

  1. 1. Hydrogen diffusion and ion implantation in silicon carbide

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Martin Janson; KTH.; [2003]
    Nyckelord :heat abd tgernidtbanucs; electronics and electrical; materials science;

    Sammanfattning : Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. LÄS MER

  2. 2. Electrically active defects in 4H silicon carbide

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :Liutauras Storasta; Linköpings universitet.; Linköpings universitet.; [2003]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Development of future technology needs to widen the application areas of semiconductor devices. The increased requirements are beyond the limits of the most common semiconductors today like silicon or gallium arsenide. Use of new materials could resolve many performance issues and also offer increased reliability and reduced cost of the devices. LÄS MER

  3. 3. Technology for photonic components in silica/silicon material structure

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Lech Wosinski; KTH.; [2003]
    Nyckelord :silica-on-silicon technology; PECVD; plasma deposition; photonic integrated circuits; planar waveguide devices; UV Bragg gratings; photosensitivity; arrayed waveguide gratings; multimode interference couplers; add-drop multiplexers;

    Sammanfattning : The main objectives of this thesis were to develop a lowtemperature PECVD process suitable for optoelectronicintegration, and to optimize silica glass composition forUV-induced modifications of a refractive index in PECVDfabricated planar devices. The most important achievement isthe successful development of a low temperature silicadeposition, which for the first time makes it is possible tofabricate good quality low loss integrated components whilekeeping the temperature below 250oC during the entirefabrication process. LÄS MER

  4. 4. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Martin Sandén; KTH.; [2001]
    Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

    Sammanfattning : .... LÄS MER

  5. 5. Chloride-based Silicon Carbide CVD

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Henrik Pedersen; Linköpings universitet.; Linköpings universitet.; [2008]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES Chemistry; NATURVETENSKAP Kemi;

    Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER