Sökning: "Active microwave measurements"

Visar resultat 11 - 15 av 25 avhandlingar innehållade orden Active microwave measurements.

  1. 11. Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters

    Författare :Mattias Thorsell; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; noise modeling; access resistance; self-heating; AlGaN GaN HEMT; thermal characterization; active load-pull; load modulation;

    Sammanfattning : The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and high power amplifiers on a single-chip. The AluminiumGallium Nitride / Gallium Nitride (AlGaN/GaN) High Electron MobilityTransistors (HEMT) is a suitable semiconductor technology for this purposedue to its high breakdown voltage and high electron mobility. LÄS MER

  2. 12. mm-Wave Data Transmission and Measurement Techniques: A Holistic Approach

    Författare :Dhecha Nopchinda; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; estimation theory; data transmission experiment; spectral efficiency; microwave network analysis; communication system; millimeter wave mm-wave system; mutual coupling effects; spectrally efficient frequency division multiplexing SEFDM ; vector network analyzer; wideband measurement.; coherent optical system; impairment compensation algorithm; identification theory; multiplier based transmitter; digital signal processing; Active load pull; linear measurement technique;

    Sammanfattning : The ever-increasing demand on data services places unprecedented technical requirements on networks capacity. With wireless systems having significant roles in broadband delivery, innovative approaches to their development are imperative. LÄS MER

  3. 13. Nonlinear Modeling of FETs for Microwave Switches and Amplifiers

    Författare :Ankur Prasad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HEMT; symmetry; small-signal model; field-plate.; GaAs; GaN; nonlinear model; trap model; symmetrical model; trap; model;

    Sammanfattning : The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc. LÄS MER

  4. 14. Characterisation and Modelling of Graphene FETs for Terahertz Mixers and Detectors

    Författare :MICHAEL ANDERSSON; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; millimetre and submillimetre waves; power detectors; nonlinear device modelling; microwave amplifiers; nanofabrication; integrated circuits; noise modelling; Field-effect transistors FETs ; terahertz detectors; Volterra; subharmonic resistive mixers;

    Sammanfattning : Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. LÄS MER

  5. 15. High frequency electronic packaging and components : characterization, simulation, materials and processing

    Författare :Christian Johansson; Mats Robertsson; Li-Rong Zheng; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Dielectric loss; high frequency electrical characterization; microwave circuits; multilayer thin film technology; ORMOCER®; permittivity; printed diode; sequential build-up; silicone elastomer; Signal processing; Signalbehandling;

    Sammanfattning : Electronic packaging continues to move towards improved performance and lower cost. Requirements of higher performance, reduced size, weight and cost of both high density interconnects and high frequency devices have led to the search for new materials, material combinations, methods, processes and production equipment. LÄS MER