Sökning: "three-color model"

Hittade 3 avhandlingar innehållade orden three-color model.

  1. 1. A combinatorial description of certain polynomials related to the XYZ spin chain

    Författare :Linnea Hietala; Göteborgs universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; six-vertex model; eight-vertex SOS model; three-color model; domain wall boundary conditions; reflecting end; partition function; determinant formula; XYZ spin chain; alternating sign matrices; polynomials; positive coefficients;

    Sammanfattning : The aim of this thesis is to study the connection between the three-color model and the polynomials q_n(z) of Bazhanov and Mangazeev. To give some background, we describe some exactly solvable, quantum integrable lattice models and their connections to each other and to other models. LÄS MER

  3. 2. Combinatorics of solvable lattice models with a reflecting end

    Författare :Linnea Hietala; Göteborgs universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; mathematics; mathematical physics; six-vertex model; eight-vertex SOS model; three-color model; reflecting end; domain wall boundary conditions; partition function; determinant formula; XYZ spin chain; alternating sign matrices; special polynomials; positive coefficients;

    Sammanfattning : I den här avhandlingen studerar vi några exakt lösbara, kvantintegrerbara gittermodeller. Izergin bevisade en determinantformel för partitionsfunktionen till sexvertexmodellen på ett gitter av storlek n × n med Korepins domänväggrandvillkor (domain wall boundary conditions – DWBC). LÄS MER

  4. 3. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy

    Författare :Tomas Uždavinys; Saulius Marcinkevičius; Audrius Alkauskas; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Gallium nitride; InGaN; near-field microscopy; photoexcited carrier dynamics; intervalley energy; Fe centers; In incorporation; Physics; Fysik;

    Sammanfattning : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. LÄS MER