Sökning: "silicon on silicon carbide"

Visar resultat 21 - 25 av 147 avhandlingar innehållade orden silicon on silicon carbide.

1. 21. Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide

   Författare :Muhammad Shakir; Carl-Mikael Zetterling; B. Gunnar Malm; Philip Mawby; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; high-temperature digital integrated circuits; process design kit PDK ; bipolar logic gates; transistor-transistor logic TTL ; TTL CPU; bipolar transistor; LSI Circuits; ASICs; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Electronics such as microprocessors are highly demanded to monitor or control a process or operation in temperature critical (300 ºC to 600 °C) applications. State-of-the-art silicon-based integrated circuits (ICs) have been improved significantly throughout the years but mainly for a low-temperature ambient. LÄS MER

3. 22. Silicon-Carbide-Based High-Voltage Submodules for HVDC Voltage-Source Converters

   Författare :Keijo Jacobs; Hans-Peter Nee; Staffan Norrga; Marc Hiller; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; HVDC converters; voltage source converters; modular multilevel converters; submodule topologies; metal-oxide-semiconductor field-effect transistor MOSFET ; insulated-gate bipolar-transistor IGBT ; power semiconductor devices; high-voltage; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : In order to transition to renewable energy sources and simultaneously meet the increasing demand for electrical energy, highly flexible and efficient grids are required. High-voltage direct-current (HVDC) transmission and grids are foreseen to be a vital part of the future electricity grid. LÄS MER

4. 23. High power bipolar junction transistors in silicon carbide

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; Electronics; Elektronik;

   Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

5. 24. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

   Författare :Yu Cao; Chalmers tekniska högskola; []
   Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

   Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER

7. 25. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

   Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER