Sökning: "Interfacial Reaction"
Visar resultat 1 - 5 av 45 avhandlingar innehållade orden Interfacial Reaction.
1. Multiscale interfacial engineering of heterogeneous electrocatalysts : From structural design to mechanistic study
Sammanfattning : In a typical heterogeneous electrocatalytic reaction, for the given active sites, the electronic structure plays a determining role in electron transfer between the active sites and reactant molecules, which impacts the reaction efficiency. Besides the electronic properties of the electrocatalysts, the reaction interface at which the charge transfer occurs plays an important role in the reaction kinetics. LÄS MER
2. Organic Synthesis in Nonionic Microemulsions
Sammanfattning : The aim of this work has been to explore the use of microemulsions as reaction media for organic synthesis. Another important aim has been to improve the understanding of the reaction kinetics and the mechanism of the reaction in this type of surfactant system. LÄS MER
3. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation
Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER
4. Interface-Assisted Perovskite Modulations for High-Performance Light-Emitting Diodes
Sammanfattning : Metal halide perovskites have emerged as a class of promising materials for a wide range of optoelectronic devices. Compared with traditional inorganic and organic semiconductors, perovskite materials can be easily processed via solution-based techniques at low temperatures and exhibit high photo-luminescence efficiency, outstanding colour purity, and superior charge transport properties, showing great promise for cost-effective and high-performance light-emitting diodes (LEDs). LÄS MER
5. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms
Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER