Sökning: "silicon on silicon carbide"

Visar resultat 11 - 15 av 147 avhandlingar innehållade orden silicon on silicon carbide.

1. 11. On Gate Drivers and Applications of Normally-ON SiC JFETs

   Författare :Dimosthenis Peftitsis; Hans-Peter Nee; Johann Walter Kolar; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Normally-ON Junction Field-Effect Transistors JFETs ; Gate-Drive Circuits; Protection circuits; High-Efficiency Converters.; Järnvägsgruppen - Elsystem; Järnvägsgruppen - Elsystem;

   Sammanfattning : In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts. LÄS MER

3. 12. Silicon carbide field-effect devices studied as gas sensors for exhaust gas monitoring

   Författare :Peter Tobias; Ignaz Eisele; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; high temperature; gas sensors; field effect devices; MISdevices; Schottky diodes; experimental design; reaction kinetics; mass transport; car exhaust; multipoint injection; response times; cylinder specific; on-board diagnosis;

   Sammanfattning : Metal-insulator-silicon carbide (MIS) structures have been studied as gas sensors. We have investigated how the sensors detect gases, how fast they do that, and how they could be used for exhaust gas monitoring.We have prepared simple field-effect devices, MIS-capacitors and Schottky diodes, on silicon carbide with platinum gates. LÄS MER

4. 13. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology

   Författare :Muhammad Waqar Hussain; Ana Rusu; Florin Udrea; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; active down-conversion mixer; BJT; EM simulations; silicon carbide; high-temperature; IF amplifier; LTCC; negative resistance oscillator; passives; RF circuits; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. LÄS MER

5. 14. Stacking Faults in Silicon Carbide

   Författare :Hisaomi Iwata; Friedhelm Bechstedt; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : This PhD thesis comprises a series of theoretical studies on various stacking faults in silicon carbide polytypes, based on first-principles density functional modelling, which lead to a detailed insight into general electronic properties of stacking disordered system. This work is largely motivated by the discovery in 1999 by ABB Corporate Research of the electronic degradation phenomenon in 4H-SiC p-i-n diodes. LÄS MER

7. 15. Chloride-based Silicon Carbide CVD

   Författare :Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

   Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER