Sökning: "low noise amplifier"

Visar resultat 6 - 10 av 71 avhandlingar innehållade orden low noise amplifier.

  1. 6. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Författare :Eunjung Cha; Chalmers University of Technology; []
    Nyckelord :dc power dissipation; cryogenic; InP high-electron mobility transistor InP HEMT ; noise temperature; low-noise amplifier LNA ; scaling; electrical stability.; indium channel content;

    Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER

  2. 7. YBa2Cu3O7-δ Biepitaxial and Step Edge Josephson Junctions on MgO Substrates. SQUID Amplifier

    Författare :Jaime Ramos; Chalmers University of Technology; []
    Nyckelord :step edge junction; noise; biepitaxial junction; energy resolution; high-TC superconductor; dc SQUID; YBa2Cu3O7; laser deposition; CeO2; amplifier; Germany; sapphire; MgO;

    Sammanfattning : This thesis concerns the preparation of Josephson junctions and their applications in Superconducting Quantum Interference Devices (SQUIDs). High temperature superconductors were used for operation at 77 K, the boiling temperature of liquid nitrogen. LÄS MER

  3. 8. Noise Properties of the Single Electron Transistor

    Författare :Serguei Kafanov; Chalmers University of Technology; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Low-Frequency noise; Shot Noise; 1 f noise; Single Electron Transistor; charge sensitivity; SET; electrometer; Coulomb blockade; radio-frequency Single Electron Transistor; RF-SET;

    Sammanfattning : The Single Electron Transistor (SET) is a sensitive electrometer with a charge sensitivityultimately limited by noise. In this thesis we present measurements of noiseproperties and charge sensitivity of the radio-frequency Single Electron Transistor. LÄS MER

  4. 9. MMIC-based Low Phase Noise Millimetre-wave Signal Source Design

    Författare :Thi Ngoc Do Thanh; Chalmers University of Technology; []
    Nyckelord :millimetre-wave; MMIC; low frequency noise; phase noise; GaN HEMT; signal source; D-band; InP DHBT; deposition method.; SiGe BiCMOS; frequency multiplier; VCO; passivation;

    Sammanfattning : Wireless technology for future communication systems has been continuously evolving to meet society’s increasing demand on network capacity. The millimetre-wave frequency band has a large amount of bandwidth available, which is a key factor in enabling the capability of carrying higher data rates. LÄS MER

  5. 10. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

    Författare :Staffan Bruce; Uppsala universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER