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Visar resultat 16 - 20 av 36 avhandlingar som matchar ovanstående sökkriterier.
16. At the heart of Quantum Materials: Magnetism as a means and an end from a muon perspective
Sammanfattning : Functional materials are at the center of solid state physics research and technological innovation in our era. In order to create (semi)autonomous, high precision and lightning-fast devices it is necessary to explore, modify and control the intrinsic properties of matter. LÄS MER
17. Materials analysis using MeV-ions: fundamental challenges and in-situ applications
Sammanfattning : The interaction of energetic ions with matter is highly relevant for a wide range of applications. Amongst them, material characterization employing ion beams is widely used due to its capability of high-resolution composition depth profiling. LÄS MER
18. Ventricular fibrillation and defibrillation in patients with implantable cardioverter defibrillators
Sammanfattning : Since the introduction of the implantable cardioverter defibrillator for humans with malignant ventricular arrhythmias in 1980, over 50, 000 patients world wide have received this device. The implantation procedure is simple and resembles the implantation of an ordinary pacemaker. LÄS MER
19. Impact of Ionizing Radiation on 4H-SiC Devices
Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER
20. Capacitance transient measurements on point defects in silicon and silicol carbide
Sammanfattning : Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. LÄS MER