Sökning: "doping"

Visar resultat 16 - 20 av 421 avhandlingar innehållade ordet doping.

1. 16. III-V Nanowire Solar Cells: Growth and Characterization

   Författare :Gaute Otnes; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Nanowire; Solar cell; Photovoltaic; Metal organic vapor phase epitaxy; Nanoimprint lithography; Electron beam induced current; Current-voltage characteristics; Doping; Fysicumarkivet A:2018:Otnes;

   Sammanfattning : To mitigate dangerous climate change, a transition to a new and sustainable energy system is needed. In this system, solar energy will need to be a key player. Prices of electricity made from solar cells have declined rapidly over the recent decades, making solar energy competitive in more markets. LÄS MER

3. 17. Photon Upconversion in Heavily Doped Semiconductors

   Författare :Kilian Mergenthaler; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V semiconductor materials; nanowires; photoluminescence; Photon upconversion; semiconductors; doping; Fysicumarkivet A:2016:Mergenthaler;

   Sammanfattning : In this thesis the luminescence properties of highly doped semiconductors are studied with focus on degenerately n-doped InP. It is demonstrated how photoluminescence measurements on degenerately doped semiconductors allow an estimation of the doping concentration without need for electrical contacts. LÄS MER

4. 18. Interplay of the Electrical and Mechanical Properties of Conjugated Polymers

   Författare :Sepideh Zokaei; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; organic electronics; organic semiconductors; doping; copolymers; conjugated polymers; mechanical properties; composites; blends; electrical properties; conducting fibers;

   Sammanfattning : Knowledge about organic semiconductors has drastically developed in the past decades. They have a myriad of applications in areas such as energy harvesting and storage, bioelectronics and wearable electronics. For most of these applications, mechanical flexibility is desirable. LÄS MER

5. 19. Controlling Electronic and Geometrical Structure of Honeycomb-Lattice Materials Supported on Metal Substrates : Graphene and Hexagonal Boron Nitride

   Författare :Nikolay Vinogradov; Nils Mårtensson; Karsten Horn; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; graphene; h-BN; electronic structure; adsorption; doping; nano-templates; PES; NEXAFS; LEEM; STM; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

   Sammanfattning : The present thesis is focused on various methods of controlling electronic and geometrical structure of two-dimensional overlayers adsorbed on metal surfaces exemplified by graphene and hexagonal boron nitride (h-BN) grown on transition metal (TM) substrates. Combining synchrotron-radiation-based spectroscopic and various microscopic techniques with in situ sample preparation, we are able to trace the evolution of overlayer electronic and geometrical properties in overlayer/substrate systems, as well as changes of interfacial interaction in the latter. LÄS MER

7. 20. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

   Författare :Andrea Troian; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

   Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER