Sökning: "InP 110 :As"
Visar resultat 11 - 15 av 16 avhandlingar innehållade orden InP 110 :As.
11. Transmission Electron Microscopy of III-V Nanowires and Nanotrees
Sammanfattning : In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures grown by metal-organic vapour phase epitaxy (MOVPE) are studied by electron microscopy methods. In particular, the three-dimensional structure of nanowires and nanotrees has been characterised by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and multi-slice (MS) simulations. LÄS MER
12. Heterostructure Field-Effect Transistors for Millimeter Wave Applications
Sammanfattning : This thesis deals with the development of low-noise heterostructure field-effect transistors (HFETs) on III-V materials. The emphasis is on devices for high gain and low noise applications. Fabrication processes have been developed and transistors have been fabricated and characterized. LÄS MER
13. Efficient 1.3 mm GaInNAs Quantum Well Lasers for Uncooled, High Speed Operation
Sammanfattning : The rapid expansion of tele and data transmission systems requires an ever increasing capacity in modern optical fibre communication networks. With the implementation of short distance, high density networks, such as access networks, there is a need for cost-effective optical transmitters compatible with single mode fibres. LÄS MER
14. Silicon Integrated HBV Frequency Multipliers for THz Applications
Sammanfattning : This thesis deals with integrated varactor diode circuits for terahertz (THz) applications. In particular hybrid, monolithic microwave integrated circuits (MMICs), and heterogeneous integration are explored for frequency multiplier applications. LÄS MER
15. High performance materials and processing technology for uncooled 1.3 μm laser diodes
Sammanfattning : This thesis investigates different material systems and processing technology for high temperature compatible laser diodes used in volume applications within the 1.3-μm telecom wavelength window. LÄS MER