Sökning: "GaInNAs"

Visar resultat 1 - 5 av 10 avhandlingar innehållade ordet GaInNAs.

  1. 1. Efficient 1.3 mm GaInNAs Quantum Well Lasers for Uncooled, High Speed Operation

    Författare :Yongqiang Wei; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; semiconductor laser; uncooled; temperature dependence; modulation; quantum well; molecular beam epitaxy; high speed; GaInNAs;

    Sammanfattning : The rapid expansion of tele and data transmission systems requires an ever increasing capacity in modern optical fibre communication networks. With the implementation of short distance, high density networks, such as access networks, there is a need for cost-effective optical transmitters compatible with single mode fibres. LÄS MER

  3. 2. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators

    Författare :Göran Adolfsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; single mode laser; transfer matrix method; threshold current; InGaAs; GaAs; multiple quantum wells; dilute nitrides; two-color laser; GaInNAs; Semiconductor lasers; molecular beam epitaxy; characteristic temperature; temperature dependence; ambipolar diusion; Fabry-Perot resonator; spectral engineering;

    Sammanfattning : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). LÄS MER

  4. 3. Epitaxy of GaAs-based long-wavelength vertical cavity lasers

    Författare :Carl Asplund; KTH; []
    Nyckelord :gainnas; ingaas; quantum wells; movpe; mocvd; vertical cavity laser; bcsel; long-wavelength; epitaxy; xrd; dbr;

    Sammanfattning : Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. LÄS MER

  5. 4. Growth and Fabrication of 1.3-1.55 µm GaInNAs(Sb)/GaAs Quantum Well Lasers

    Författare :Huan Zhao Ternehäll; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : .... LÄS MER

  7. 5. Development of 1.3-μm GaAs-based vertical-cavity surface-emitting lasers

    Författare :Petrus Sundgren; Mattias Hammar; Harri Lipsanen; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik; Physics; Fysik;

    Sammanfattning : Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are desirable as low-cost sources for optical metropolitan-area and access networks. In the development of 1.3-µm VCSELs, most attention today is given to monolithic GaAs-based solutions, although no established active material exists in this wavelength region. LÄS MER