Sökning: "InGaAsP"

Visar resultat 1 - 5 av 14 avhandlingar innehållade ordet InGaAsP.

  1. 1. High performance materials and processing technology for uncooled 1.3 μm laser diodes

    Författare :Roberta Campi; Gunnar Landgren; Abdallah Ougazzaden; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; MOCVD; InGaAsP; AlGaInAsP; AlGaInAs; In-situ etching; TBCI; Semiconductor physics; Halvledarfysik;

    Sammanfattning : This thesis investigates different material systems and processing technology for high temperature compatible laser diodes used in volume applications within the 1.3-μm telecom wavelength window. LÄS MER

  3. 2. Structural studies of InGaAsP/InP-based lasers : By Thomas Kallstenius

    Författare :Thomas Kallstenius; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Materialvetenskap; Materials science; Teknisk materialvetenskap; materialvetenskap; Materials Science;

    Sammanfattning : Reliable buried-heterostructure (BH) InGaAsP/InP-based laser diodes (LDs) is essentialto the operation of fiber optics communication systems. In this thesis, the structural,electrical and optical properties of such LDs have been studied. The aim has been toidentify materials-related mechanisms causing gradual emission degradation. LÄS MER

  4. 3. Design, Fabrication and Analysis of InP-InGaAsP Traveling-Wave Electro-Absorption Modulators

    Författare :Stefan Irmscher; KTH; []
    Nyckelord :fiber-optic communication; modulator; electroabsorption; traveling-wave; InP; broad-band modulation;

    Sammanfattning : External modulators will become key components in fiberoptical communica- tion systems operating at 40Gbit/s andhigher bitrates. Semiconductor electro- absorption (EA)modulators are promising candidates because of their high-speed potential, and their process compatibility with thecorresponding semi- conductor laser light sources. LÄS MER

  5. 4. Design and fabrication of multiple quantum well structures for long wavelength laser diodes

    Författare :Christofer Silfvenius; KTH; []
    Nyckelord :;

    Sammanfattning : InGaAsP multiple quantum well (MQW) structures emitting at1300 nm have been designed, fabricated with metal organicvapour phase epitaxy (MOVPE) and evaluated by x-ray diffraction(XRD), photoluminescence (PL) and by laser characterisation. Inaddition the structures were subject to scanning probemicroscopy (STM/AFM) and direct carrier transport measurements. LÄS MER

  7. 5. High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications

    Författare :Himanshu Kataria; Sebastian Lourdudoss; Matty Caymax; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) technology and is supported by extensive experimental results. The aimed applications are light sources on silicon for electronics-photonics integration and cost effective high efficiency multijunction solar cells. LÄS MER