Sökning: "InP 110 :As"

Visar resultat 6 - 10 av 16 avhandlingar innehållade orden InP 110 :As.

  1. 6. Photoelectron spectroscopy on III-V semiconductors : valence bands, core levels and core excitons

    Författare :Henric Oscarsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InP 110 :As; surface; InAs; valence band; MBE; photoelectron spectroscopy; core level; core exciton; semiconductor; GaAs 111 A;

    Sammanfattning : .... LÄS MER

  3. 7. Millimeter-wave Transceiver ICs for Ultrahigh Data Rate Communications Using Advanced III-V and Silicon Technologies

    Författare :Sona Carpenter; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; D-band; frequency multiplier; 110-170 GHz; QPSK; demodulator; I Q modulator; transmitter; high-order modulation; receiver; high data rate; single chip; SiGe BiCMOS; QAM; InP DHBT; direct conversion; Gilbert-cell mixer; millimeter-wave communication; 5G; MMIC; point-to-point radio.;

    Sammanfattning : Today’s main driving parameter for radio transceiver research is the ability to provide high capacity while maintaining low cost, small form factor, and low power consumption. Direct conversion architectures (due to the feasibility of monolithic integration) at millimeter-wave (due to wideband availability) have attracted large interest in recent years because of their potential to meet these demands. LÄS MER

  4. 8. Electronic Structure Calculations of Point Defects in Semiconductors

    Författare :Andreas Höglund; Susanne Mirbt; Alison Mainwood; Uppsala universitet; []
    Nyckelord :Physics; electronic structure calculations; point defects; semiconductor; formation energy; equilibrium solubility limit; thermodynamic equilibrium concentration; transfer levels; negative-U; 110 surface; diffusion; activation energy; solar cells; Fysik;

    Sammanfattning : In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. LÄS MER

  5. 9. MMIC-based Low Phase Noise Millimetre-wave Signal Source Design

    Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; millimetre-wave; MMIC; low frequency noise; phase noise; GaN HEMT; signal source; D-band; InP DHBT; deposition method.; SiGe BiCMOS; frequency multiplier; VCO; passivation;

    Sammanfattning : Wireless technology for future communication systems has been continuously evolving to meet society’s increasing demand on network capacity. The millimetre-wave frequency band has a large amount of bandwidth available, which is a key factor in enabling the capability of carrying higher data rates. LÄS MER

  7. 10. Epitaxial Lateral Overgrowth of Indium Phosphide and Its Application in Heteroepitaxy

    Författare :Yanting Sun; KTH; []
    Nyckelord :electronics; electrical; material science;

    Sammanfattning : Monolithic integration of optoelectronics on silicon is adream. This thesis deals with the studies on the heteroepitaxyof indium phosphide on silicon substrate towards making thatdream come true. Materials growth issues, characterization anddefect identification are addressed. LÄS MER