Sökning: "metal-organic vapor phase epitaxy"

Visar resultat 21 - 25 av 25 avhandlingar innehållade orden metal-organic vapor phase epitaxy.

  1. 21. Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects

    Författare :Jie Sun; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor; Quantum Dots; Ballistic Transport; InGaAs InP 2DEG; Nanoelectronics;

    Sammanfattning : As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. With this background, the present thesis focuses on semiconductor nanoelectronic devices based on ballistic and quantum effects. The main material studied was a modulation doped In0. LÄS MER

  3. 22. Magnetotransport Studies of Mn Ion-Implanted Nanowires

    Författare :Waldomiro Paschoal; Linnaeus University; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; hopping conduction; ferromagnetism; ion-implantation; Nanowire; GaMnAs; magnetoresistance; Fysicumarkivet A:2014:Paschoal;

    Sammanfattning : This thesis focuses on the magnetotransport properties of highly Mn-doped crystalline GaAs nanowires. The GaAs nanowires were first grown by metal-organic vapor phase epitaxy from gold seed particles, and subsequently implanted with Mn ions under varying conditions, e.g., ion fluence and acceleration voltage. LÄS MER

  4. 23. Development of 1.3-μm GaAs-based vertical-cavity surface-emitting lasers

    Författare :Petrus Sundgren; Mattias Hammar; Harri Lipsanen; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik; Physics; Fysik;

    Sammanfattning : Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are desirable as low-cost sources for optical metropolitan-area and access networks. In the development of 1.3-µm VCSELs, most attention today is given to monolithic GaAs-based solutions, although no established active material exists in this wavelength region. LÄS MER

  5. 24. Doping effects on the structural and optical properties of GaN

    Författare :Sergey Khromov; Galia Pozina; Lars Hultman; Thierry Bretagnon; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. LÄS MER

  7. 25. Compound semiconductor materials and processing technologies for photonic devices and photonics integration

    Författare :Carl Reuterskiöld Hedlund; Mattias Hammar; Mikael Östling; Sebastian Lourdudoss; Harri Lipsanen; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e. LÄS MER