Sökning: "Galia Pozina"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden Galia Pozina.

  1. 1. Electronic properties of intrinsic defects and impurities in GaN

    Författare :Tran Thien Duc; Carl Hemmingsson; Galia Pozina; Erik Janzén; Walter Meyer; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. LÄS MER

  3. 2. Optical properties of novel semiconductor nanostructures

    Författare :Stanislav Filippov; Irina Buyanova; Weimin Chen; Galia Pozina; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Semiconductor nanostructures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), have recently gained increasing interest due to their unique physical properties that are found attractive for a wide variety of applications ranging from gas sensing and spintronics to optoelectronics and photonics. Here, especially promising are nanostructures based on compound semiconductors, including ZnO, GaNP and GaAs/InAs. LÄS MER

  4. 3. Optical and Structural Characterization of GaN Based Hybrid Structures and Nanorods

    Författare :Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Oleksandr Plashkevych; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : GaN belongs to the group III nitrides and is today the material of choice for efficient blue light emission, enabling solid state white lighting by combining red, blue and green light emitting diodes (LED) or by having a blue LED illuminating a phosphor. By combining GaN quantum well (QW) structures with colloids, nanoparticles or polyfluorene films, LEDs may be fabricate at lower cost. LÄS MER

  5. 4. Study of GaN Based Nanostructures and Hybrids

    Författare :Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Kevin P. O'Donnell; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Sputtering; Forster; Semiconductor; Nitride; GaN; Hybrid; Nanorods; Nanostructure; Thin film; Förstoffning; Sputtring; Förster; Halvledare; Nitrid; GaN; Hybrider; Nanostavar; Nanostrukturer; tunnfilmer;

    Sammanfattning : GaN and its alloys with Al and In belong to the group III nitride semiconductors and are today the materials of choice for efficient white light emitting diodes (LEDs) enabling energy saving solid state lighting. Currently, there is a great interest in the development of novel inexpensive techniques to fabricate hybrid LEDs combining high quality III-N quantum well (QW) structures with inexpensive colloidal nanoparticles or conjugated polymers. LÄS MER

  7. 5. Doping effects on the structural and optical properties of GaN

    Författare :Sergey Khromov; Galia Pozina; Lars Hultman; Thierry Bretagnon; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. LÄS MER