Sökning: "cryogenic amplifier"

Visar resultat 1 - 5 av 14 avhandlingar innehållade orden cryogenic amplifier.

1. 1. Development of Cryogenic Low Noise 4-8 GHz HEMT Amplifier and its Advanced Characterization

   Författare :Erik Sundin; Chalmers University of Technology; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; shot-noise; low noise amplifier; cryogenic amplifier; sis; noise measurement; HEMT;

   Sammanfattning : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. LÄS MER

3. 2. Cryogenic low noise amplifiers for microwave frequencies

   Författare :Jianguo Xu; Chalmers University of Technology; []
   Nyckelord :MODFET; cryogenic; millimeter-wave; low-noise amplifier; FET noise model; microwave; TEGFET; HEMT; noise measurement; HFET; computer-aided design;

   Sammanfattning : .... LÄS MER

4. 3. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

   Författare :Isabel Harrysson Rodrigues; Chalmers University of Technology; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; magnetic field; cryogenic; low noise amplifier; angular dependence; InP HEMT; geometrical magnetoresistance;

   Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. LÄS MER

5. 4. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

   Författare :Eunjung Cha; Chalmers University of Technology; []
   Nyckelord :InP high-electron mobility transistor InP HEMT ; cryogenic; noise temperature; electrical stability.; low-noise amplifier LNA ; scaling; indium channel content; dc power dissipation;

   Sammanfattning : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. LÄS MER

7. 5. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

   Författare :Joel Schleeh; Chalmers University of Technology; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

   Sammanfattning : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. LÄS MER