Visar resultat 1 - 5 av 9 avhandlingar innehållade ordet cascode.
Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER
Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER
Sammanfattning : The most essential unit required for all the electronic devices is the Power Supply Unit (PSU). The main objective of power supply designers is to reduce the size, cost and weight, and to increase the power density of the converter. LÄS MER
Sammanfattning : The continued growth of data traffic in wireless communication applications demands to launch next-generation communication services at millimeter wave frequencies. Despite the obvious advantage of a large available spectrum, using millimeter wave bands is accompanied by many technological challenges. LÄS MER
Sammanfattning : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. LÄS MER