GaN-based HEMTs for Cryogenic Low-Noise Applications

Sammanfattning: Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). Complying with the required high sensitivity, Low Noise Amplifiers (LNAs) operating at cryogenic temperatures are key elements in radio astronomy instrumentation. Thus far, advanced semiconductor technologies but with limited power-handling capabilities have been traditionally employed as LNAs. Over the past decades, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) were demonstrated at room temperature to offer a combination of both excellent low-noise operation and a superior high-power handling performance compared to other materials. In addition, a number of studies indicated a promising potential for the GaN technology to operate at cryogenic temperatures. However, the cryogenic noise performance of the GaN-HEMTs remained unexplored so far. This thesis investigates the potential of GaN–based HEMTs for low-noise operation at these cryogenic temperatures. Established characterization and modeling approaches were employed for this purpose. As a main result, this work reveals a first estimation of the noise performance of GaN-HEMTs at cryogenic temperatures of ~10 K which compares to other more advanced technologies in this field. This was achieved through the extraction of a model, based on experimental noise measurements, describing the microwave noise behavior at cryogenic temperatures at the device level. The model predicts the noise contribution of GaN-HEMTs at cryogenic temperatures with respect to the frequency of operation, the dissipated power, and the total periphery of the device. Hence, it constitutes the basis for the design of future GaN-based LNAs which fulfill the different requirements set by the demanding cryogenic applications. The extracted cryogenic noise model was used to identify and analyze the role of the different physical parameters of the device, over which a technological control might be possible in the future in order to improve the assessed noise performance of the cryogenic GaN-HEMTs. From that perspective, GaN-HEMTs featuring superconducting Niobium (Nb)-gates were demonstrated for the first time. The successful integration of superconducting Nb-gates into AlGaN/GaN HEMTs was demonstrated on different samples, showing a suppression of the gate resistance independently of the width and length of the gate below a critical temperature ?? < 9.2 K. The superconductivity of the gate leads to the cancellation of the associated noise contribution. Comparing the noise performance of the resulting devices to that of the conventional Gold (Au)-gated GaN-HEMTs, it was concluded that further management of the device’s self-heating is required to enable the full potential of the Nb-gate by maintaining its superconductivity while operating at optimum-noise bias conditions.