Sökning: "frequency doubler"

Hittade 5 avhandlingar innehållade orden frequency doubler.

  1. 1. MMIC FET frequency doublers and FMCW radar transceivers

    Författare :Christian Fager; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; transceiver; FMCW; frequency doubler; MMIC; suppression; radar; AM noise;

    Sammanfattning : .... LÄS MER

  3. 2. Resistive FET frequency multipliers for micro- and millimetre waves

    Författare :Marcus Jonsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; frequacy multiplier; frequency doubler; FET multiplier; resistive multiplier;

    Sammanfattning : .... LÄS MER

  4. 3. Millimetre wave waveguide enclosed grid frequency multipliers and imaging

    Författare :Robin Dahlbäck; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Millimeter wave; THz imaging; THz sources; Grid; Heterostructure Barrier Var- actors HBVs ; Varactors; Array; FMCW; 2D-grid; Quasi-optical.; Frequency multipliers; Radars; sub-millimetre waves; Schottky diodes;

    Sammanfattning : The utilisation of the THz spectrum ( 0.3-10 THz ) is hampered by fundamental difficulties in generating power at these frequencies. LÄS MER

  5. 4. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Författare :Mattias Ferndahl; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Sammanfattning : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. LÄS MER

  7. 5. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

    Författare :Staffan Bruce; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER