Sökning: "dlts"
Visar resultat 6 - 10 av 21 avhandlingar innehållade ordet dlts.
6. Shallow traps at the SiO₂/SiC interface
Sammanfattning : .... LÄS MER
7. Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC
Sammanfattning : Silicon (Si) is the most commonly used n-type dopant in AlGaN, but the conductivity of Si-doped AlxGa1-xN was often reported to drop abruptly at high Al content (x>0.7) and the reason was often speculated to be due to either compensation by deep levels or self-compensation of the so-called DX (or negative-U) center. LÄS MER
8. Capacitance transient measurements on point defects in silicon and silicol carbide
Sammanfattning : Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. LÄS MER
9. Carrier Lifetime Relevant Deep Levels in SiC
Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER
10. Deep levels in SiC
Sammanfattning : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. LÄS MER
