Sökning: "dlts"
Visar resultat 11 - 15 av 21 avhandlingar innehållade ordet dlts.
11. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers
Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER
12. Electron Paramagnetic Resonance Studies of Point Defects in AlGaN and SiC
Sammanfattning : Point defects in semiconductor materials are known to have important influence on the performance of electronic devices. For defect control, knowledge on the model of defects and their properties is required. LÄS MER
13. Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
Sammanfattning : Fabrication and characterisation of buried metal contacts in compound semiconductors are demonstrated. The contacts have been investigated due to their usage both as gates in transistors and as active or passive elements in novel devices. LÄS MER
14. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material
Sammanfattning : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. LÄS MER
15. Dynamic avalanche in Si and 4H-SiC power diodes
Sammanfattning : Semiconductor power modules for the control of high currentsand high voltages have important applications in motor drives,traction and power transmission. Dynamic avalanche is of atechnological interest since it may limit the safe operatingarea for bipolar switching devices and for power diodes, whichare important integral parts of a power module. LÄS MER