Sökning: "carrier lifetimes"

Visar resultat 1 - 5 av 10 avhandlingar innehållade orden carrier lifetimes.

  1. 1. InP-based photonic crystals : Processing, Material properties and Dispersion effects

    Författare :Audrey Berrier; Srinivasan Anand; Alfred Forchel; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Photonic crystals; indium phosphide; photonic bandgap; Bloch modes; slow light; dispersion; coupled cavity waveguides; chemically assisted ion beam etching; lag effect; cavities; optical losses; carrier transport; carrier lifetimes; negative refraction; photonic bandstructure; Physics; Fysik;

    Sammanfattning : Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic bandgap, i.e., a range of wavelength for which light propagation is forbidden. The special band structure related dispersion properties offer a realm of novel functionalities and interesting physical phenomena. LÄS MER

  3. 2. Impact of carrier localization on recombination in InGaN quantum wells with nonbasal crystallographic orientations

    Författare :Ruslan Ivanov; Saulius Marcinkevičius; Nicolas Grandjean; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InGaN; quantum well; semipolar; nonpolar; near-field microscopy; carrier localization; carrier transport; optical polarization; Fysik; Physics;

    Sammanfattning : The modern InGaN technology demonstrates high efficiencies only in the blue spectral region and low current operation modes. The growth of InGaN quantum wells (QWs) on nonbasal crystallographic planes (NBP) has potential to deliver high-power blue and green light emitting diodes and lasers. LÄS MER

  4. 3. Carrier Lifetime Relevant Deep Levels in SiC

    Författare :Ian Don Booker; Einar Sveinbjörnsson; Erik Janzén; Anthony Peaker; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon carbide; Deep level transient spectroscopy; Deep level; Carrier lifetime; Time-resolved photoluminescence;

    Sammanfattning : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. LÄS MER

  5. 4. 4H-SiC epitaxy investigating carrier lifetime and substrate off-axis dependence

    Författare :Louise Lilja; Peder Bergman; Jawad ul-Hassan; Ulrike Grossner; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Silicon carbide (SiC) is a wide bandgap semiconductor with unique material properties making it useful for various device applications using high power, high frequency and high temperature. Compared to Si-based electronics, SiC based electronics have an improved energy efficiency. LÄS MER

  7. 5. Time-Resolved Photoemission Electron Microscopy: Development and Applications

    Författare :Lukas Wittenbecher; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; PEEM; time-resolved PEEM; ultrafast optics; pulse shaping; plasmonics; semiconductor nanowires; hot electrons; ultrafast microscopy; charge carrier relaxation;

    Sammanfattning : Time-resolved photoemission electron microscopy (TR-PEEM) belongs to a class of experimental techniquescombining the spatial resolution of electron-based microscopy with the time resolution of ultrafast opticalspectroscopy. This combination provides insight into fundamental processes on the nanometer spatial andfemto/picosecond time scale, such as charge carrier transport in semiconductors or collective excitations ofconduction band electrons at metal surfaces. LÄS MER