Sökning: "semiconductor nanowires"

Visar resultat 1 - 5 av 127 avhandlingar innehållade orden semiconductor nanowires.

  1. 1. Semiconductor Nanowires: Epitaxy and Applications

    Författare :Thomas Mårtensson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; semiconductor; nanotechnology; nanowires; crystal growth; metal-organic vapour phase epitaxy; III-V; silicon; MOVPE; light-emitting diode; single-electron transistor; cell;

    Sammanfattning : Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. LÄS MER

  3. 2. Doping of Semiconductor Nanowires

    Författare :Jesper Wallentin; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; III-V semiconductor materials; nanowires; doping; solar cells; F:2013:Wallentin;

    Sammanfattning : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. LÄS MER

  4. 3. Epitaxial growth of semiconductor nanowires

    Författare :Ann Persson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

    Sammanfattning : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. LÄS MER

  5. 4. Electron Transport in Semiconductor Nanowires

    Författare :Mikael Björk; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; heterostructures; single electron transistors; resonant tunneling; quantum dots; weak antilocalization; Halvledarfysik; field effect transistors; Semiconductory physics; Fysicumarkivet A:2004:Björk; Low-dimensional structures; nanowires; chemical beam epitaxy;

    Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER

  7. 5. Characterisation of III-V semiconductor nanowires by in-situ transmission electron microscopy

    Författare :Magnus Larsson; Centrum för analys och syntes; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; STM-TEM; semiconductor; STM; nanowires; VSS mechanism; Electron microscopy;

    Sammanfattning : [abstract missing].... LÄS MER