Sökning: "delta-doping"

Hittade 4 avhandlingar innehållade ordet delta-doping.

  1. 1. Silicon δ-doping and Isoelectronic Doping in GaAs ans GaN Layers Grown by MBE

    Författare :Jan Thordson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; MBE; doping; GaN; III-V; delta-doping; heterostructures; GaAs;

    Sammanfattning : This work concerns MBE-grown material, particularly physical effects due to controlled impurities of Si and N in arsenides, and the growth of nitrides and studies of Al- and As-impurities in them. Apart from interesting physical phenomena there are important device applications. The first part is devoted to studies of Si .delta. LÄS MER

  3. 2. Silicon δ-doping and GaAs/Si/GaAs heterostructures

    Författare :Jan Thordson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaAs Si GaAs; GaAs; delta-doping; heterostructures; MBE; silicon;

    Sammanfattning : .... LÄS MER

  4. 3. Breaking the symmetry : spin splitting of hole subbands in strained quantum wells

    Författare :Oskar Mauritz; KTH; []
    Nyckelord :;

    Sammanfattning : Properties of the subband structure and related propertiesof quantum wells (QWs) are investigated, within the frameworkof the multi-band envelope function method. The subbands of aQW are replaced by discrete Landau levels when a magnetic fieldis applied perpendicular to the plane of the well. LÄS MER

  5. 4. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

    Författare :Niklas Rorsman; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

    Sammanfattning : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. LÄS MER