Sökning: "tantalum oxide"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden tantalum oxide.

  1. 1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    Författare :Katarina Forsgren; Steven George; Uppsala universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. LÄS MER

  2. 2. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    Författare :Jonas Sundqvist; Anders Hårsta; Roy Gordon; Uppsala universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Sammanfattning : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. LÄS MER

  3. 3. Electrochromic Properties of Iridium Oxide Based Thin Films

    Författare :Jonas Backholm; Gunnar A. Niklasson; Andris Azens; Franco Decker; Uppsala universitet; []
    Nyckelord :Engineering physics; Electrochromism; iridium oxide; hydrogen intercalation; chemical diffusion coefficient; density of states; optical modulation; Teknisk fysik;

    Sammanfattning : Electrochromic iridium oxide (IrOx) and iridium-tantalum oxide (IrTaOx) thin films were prepared by reactive magnetron sputtering. Composition, density, and structure were determined using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. LÄS MER

  4. 4. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies

    Författare :Jörgen Westlinder; Jörgen Olsson; Stefan Bengtsson; Uppsala universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; metal gate; high-κ dielectics; titanium nitride; zirconium nitride; MOSFET; thin film; tantalum oxide; aluminum nitride; Elektronik; Electronics; Elektronik;

    Sammanfattning : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. LÄS MER

  5. 5. The structural chemistry of niobium and tantalum oxide fluorides containing divalent lead

    Författare :Örjan Sävborg; Stockholms universitet; []

    Sammanfattning : .... LÄS MER