Sökning: "tantalum oxide"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden tantalum oxide.

  1. 1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Katarina Forsgren; Uppsala universitet.; [2001]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; NATURAL SCIENCES Chemistry; NATURVETENSKAP Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. LÄS MER

  2. 2. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Jonas Sundqvist; Uppsala universitet.; [2003]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; NATURAL SCIENCES Chemistry Inorganic chemistry; NATURVETENSKAP Kemi Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Sammanfattning : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. LÄS MER

  3. 3. Electrochromic Properties of Iridium Oxide Based Thin Films

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Jonas Backholm; Uppsala universitet.; [2008]
    Nyckelord :Engineering physics; Electrochromism; iridium oxide; hydrogen intercalation; chemical diffusion coefficient; density of states; optical modulation; Teknisk fysik;

    Sammanfattning : Electrochromic iridium oxide (IrOx) and iridium-tantalum oxide (IrTaOx) thin films were prepared by reactive magnetron sputtering. Composition, density, and structure were determined using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. LÄS MER

  4. 4. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Jörgen Westlinder; Uppsala universitet.; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; metal gate; high-κ dielectics; titanium nitride; zirconium nitride; MOSFET; thin film; tantalum oxide; aluminum nitride; Elektronik; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. LÄS MER

  5. 5. Physics of palladium metal-oxide-semiconductor devices

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :Mårten Armgarth; Linköpings universitet.; Linköpings universitet.; [1983]

    Sammanfattning : This thesis Palladium gate metal-oxide-semiconductor (PdMOS) devices are used as hydrogen sensors. It is shown that the sensitivity is only partly due to the change of the effective work function of the Pd gate on hydrogen adsorption. Sodium ion drift experiments have shown that hydrogen-sodium interactions occur in PdMOS devices. LÄS MER