Sökning: "partial defect"

Visar resultat 16 - 20 av 48 avhandlingar innehållade orden partial defect.

  1. 16. Strain-related structural and vibrational properties of group-III nitride layers and superlattices

    Författare :Vanya Darakchieva; Oliver Ambacher; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This PhD thesis is focused on strain-related phenomena in group-III nitride layers and heterostructures. Key issues in material properties as phonon mode behavior, structure and lattice parameters of AlN, InN and GaN, as well as of AlN/GaN superlattices are addressed in order to give answers to some open questions. LÄS MER

  3. 17. Studies of Surface and Interface Properties of 4H-SiC/Si02

    Författare :Chariya Virojanadara (Jacobi); Ulf Karlsson; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The thesis work is focused on photoemission studies of clean and oxidized 4H-SiC surfaces since 4H-SiC has been considered the most promising for device applications. Oxide layers can be easily grown by standard wet and dry oxidation methods but to obtain good interface properties (i.e. LÄS MER

  4. 18. Growth of Wide-Band Gap AlN and (SiC)x(AlN)1-x Thin Films by Reactive Magnetron Sputter Deposition

    Författare :Sukkaneste Tungasmita; Gregory W. Auner; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The research presented in this thesis is focused on thin film synthesis of epitaxial wurtzite structure aluminum nitride (AlN) and related alloy, (SiC)x(AlN)1-x,by ultra-high-vacuum (UHV) reactive magnetron sputter deposition, on silicon carbide (6H-SiC) substrates. The emphasis of the work is on controlling the growth and quality of the films to be able to use the materials in electronic device applications. LÄS MER

  5. 19. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

    Författare :Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

    Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER

  7. 20. Electronic structure of some SiC and Be surfaces

    Författare :Per-Anders Glans; Lars Johansson; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon carbide (SiC) is a wide-bandgap semiconductor whose properties make it a good candidate for high-power, high-voltage, high-temperature and highfrequency devices. Beryllium (Be) is a metal with some unusual electronic properties. LÄS MER