Sökning: "partial defect"

Visar resultat 11 - 15 av 48 avhandlingar innehållade orden partial defect.

  1. 11. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material

    Författare :Carl Hemmingsson; Gerhard Pensl; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. LÄS MER

  3. 12. Characterization of Process-related Defects in Silicon Carbide by Electron Microscopy

    Författare :Per O. Å. Persson; Pirouz Pirouz; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Silicon carbide (SiC) is a semiconducting material, which provides advantages compared to other available semiconducting materials. Attractive properties of SiC are the wide bandgap (2.2-3.3 eV), high electric breakdown field (3x106 Vcm-1), high thermal conductivity (5 Wcm-1 K-1) and the chemical stabi!ity. LÄS MER

  4. 13. Bound excitons in silicon carbide

    Författare :Tryggvi Egilsson; Gordon Davies; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The investigation of silicon carbide (SiC) is strongly motivated by the potential of this material for various demanding electronic applications. The main virtue of SiC is its toughness compared to other more common semiconductors. LÄS MER

  5. 14. Arc Evaporated Titanium Carbonitride Coatings

    Författare :Lennart Karlsson; Wolf-Dieter Münz; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : TiCxN1-x thin films is an important group of coatings for enhancing wear-resistance of, e.g., tools for metal cutting. The influence of microstructure, composition, and residual stress state, on the mechanical properties of such films, have been investigated. LÄS MER

  7. 15. Growth and Structural Characterization of SiC Crystals

    Författare :Marko Tuominen; Roland Madar; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Silicon carbide (SiC) is a promising semiconductor material for a variety of new device applications. These include high-power devices, high-voltage switching applications, hightemperature electronics, and high-power microwave applications. Due to its superior material properties SiC provides many advantages over Si. LÄS MER