Sökning: "Gerhard Pensl"

Hittade 1 avhandling innehållade orden Gerhard Pensl.

1. 1. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material

   Författare :Carl Hemmingsson; Gerhard Pensl; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. LÄS MER