Sökning: "gallium nitride GaN"

Visar resultat 31 - 35 av 43 avhandlingar innehållade orden gallium nitride GaN.

  1. 31. Hot-wall MOCVD of N-polar group-III nitride materials

    Författare :Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Elke Meissner; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER

  3. 32. Nonlinear Microwave Measurement Architectures for Wideband Device Characterization

    Författare :Sebastian Gustafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nonlinear characterization; wideband; GaN HEMT; oscilloscope; microwave; active load-pull;

    Sammanfattning : The global surge for ubiquitous mobile communication requiring high speed and high capacity cellular networks has resulted in a golden age for the development of wireless technology. Modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand. LÄS MER

  4. 33. Epitaxial strategies for defect reduction in GaN for vertical power devices

    Författare :Rosalia Delgado Carrascon; Vanya Darakchieva; Plamen Paskov; Peter Ramvall; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wavelengths and covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. LÄS MER

  5. 34. P-type and polarization doping of GaN in hot-wall MOCVD

    Författare :Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zhaoxia Bi; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. LÄS MER

  7. 35. Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy

    Författare :Henrik Larsson; Werner Seifert; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Gallium nitride (GaN) is a wide bandgap material that is already extensively used in industrial production of optoelectronic devices (light emitters) that operate in the blue and ultraviolet wavelength range. GaN is interesting not only because it has a wide bandgap (3. LÄS MER