Sökning: "bjts"

Visar resultat 1 - 5 av 18 avhandlingar innehållade ordet bjts.

1. 1. Electro-thermal investigations of4H-SiC RF power MESFETs and4H-SiC power BJTs

   Författare :Wei Liu; KTH; []
   Nyckelord :;

   Sammanfattning : .... LÄS MER

3. 2. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER

4. 3. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

   Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

5. 4. Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes

   Författare :Arash Salemi; Mikael Östling; Carl-Mikael Zetterling; Anders Hallen; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. LÄS MER

7. 5. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors

   Författare :Reza Ghandi; Martin Domeij; Anant Agarwal; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Other engineering physics; Övrig teknisk fysik;

   Sammanfattning : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. LÄS MER