Sökning: "beam emission spectroscopy"
Visar resultat 16 - 20 av 40 avhandlingar innehållade orden beam emission spectroscopy.
16. OH and Soot Optical Diagnostics for Combustion Applications for Combustion Applications
Sammanfattning : Optical diagnostics are remote non-intrusive sensing techniques. The thesis work concerns the use of OH and soot optical diagnostics for combustion research.Internal combustion (IC) engines are widely used for the generation of power and for transportation purposes. LÄS MER
17. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy
Sammanfattning : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. LÄS MER
18. Fluorescence correlation spectroscopy, photophysical aspects and applications
Sammanfattning : Fluorescence correlation spectroscopy (FCS) is a technique where dynamic processes on the molecular level are studied by the use of fluorescence. The molecules are excited within a focused stationary laser beam and the resulting fluorescence fluctuations are analyzed in the form of an autocorrelation function. LÄS MER
19. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy
Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER
20. Polarization-resolved photoluminescence spectroscopy of III-nitride quantum dots
Sammanfattning : In this thesis, results from studies on (In)GaN quantum dots (QDs) are presented, including investigations of the structural, optical and electronic properties. The experimental studies were performed on GaN and InGaN QDs grown by molecular beam epitaxy, taking advantage of the Stranki-Krastanov growth mode for the GaN QD samples and the composition segregation for the InGaN QD samples. LÄS MER